?2000 Fairchild Semiconductor International
FYPF2006DN
Rev. A, May 2000
SCHOTTKY BARRIER RECTIFIER
Absolute Maximum Ratings
T
C=25°°°°C unless otherwise noted
Thermal Characteristics
Electrical Characteristics (per diode)
* Pulse Test: Pulse Width=300μs, Duty Cycle=2%
Symbol Parameter Value Units
VRRM
Maximum Repetitive Reverse Voltage 60 V
VR
Maximum DC Reverse Voltage 60 V
IF(AV)
Maximum Average Rectified Current @ TC
= 120
°C20 A
IFSM
Maximum Forward Surge Current (per diode)
60Hz Single Half-Sine Wave
200 A
TJ, TSTG
Operating Junction and Storage Temperature -40 to +150
°C
Symbol Parameter Value Units
RθJC
Maximum Thermal Resistance, Junction to Case (per diode) 2.8
°C/W
Symbol Parameter Value Units
VFM *
Maximum Instantaneous Forward Voltage
IF
= 10A
IF
= 10A
IF
= 20A
IF
= 20A
TC
= 25
°C
0.58
TC
= 125
°C
0.52
TC
= 25
°C
0.71
TC
= 125
°C
0.65
V
IRM *
Maximum Instantaneous Reverse Current
@ rated VR
T
C
= 25
°
C
1
TC
= 125
°C
50
mA
FYPF2006DN
Features
 Low forward voltage drop
 High frequency properties and switching speed
 Guard ring for over-voltage protection
Applications
 Switched mode power supply
 Freewheeling diodes
TO-220F
1 2 3
1. Anode 2.Cathode 3. Anode
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